
基本信息:
- 专利标题: Nanoscale Field-Emission Device and Method of Fabrication
- 申请号:US15442408 申请日:2017-02-24
- 公开(公告)号:US20170250048A1 公开(公告)日:2017-08-31
- 发明人: Axel SCHERER , William M. JONES , Danil M. LUKIN , Sameer WALAVALKAR , Chieh-feng CHANG
- 申请人: California Institute of Technology
- 主分类号: H01J19/24
- IPC分类号: H01J19/24 ; H01J21/02 ; H01J9/02
摘要:
Nanoscale field-emission devices are presented, wherein the devices include at least a pair of electrodes separated by a gap through which field emission of electrons from one electrode to the other occurs. The gap is dimensioned such that only a low voltage is required to induce field emission. As a result, the emitted electrons energy that is below the ionization potential of the gas or gasses that reside within the gap. In some embodiments, the gap is small enough that the distance between the electrodes is shorter than the mean-free path of electrons in air at atmospheric pressure. As a result, the field-emission devices do not require a vacuum environment for operation.
公开/授权文献:
- US10366856B2 Nanoscale field-emission device and method of fabrication 公开/授权日:2019-07-30