基本信息:
- 专利标题： DUAL METAL INTERCONNECT STRUCTURE
- 申请号：US15051973 申请日：2016-02-24
- 公开(公告)号：US20170243947A1 公开(公告)日：2017-08-24
- 发明人： Praneet Adusumilli , Hemanth Jagannathan , Koichi Motoyama , Oscar Van Der Straten
- 申请人： International Business Machines Corporation
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01L21/768 ; H01L21/8234 ; H01L29/08 ; H01L27/088
摘要：
Source/drain contact structures that exhibit low contact resistance and improved electromigration properties are provided. After forming a first contact conductor portion comprising a metal having a high resistance to electromigration such as tungsten at a bottom portion of source/drain contact trench to form direct contact with a source/drain region of a field effect transistor, a second contact conductor portion comprising a highly conductive metal such as copper or a copper alloy is formed over the first contact conductor portion.
公开/授权文献:
- US09741812B1 Dual metal interconnect structure 公开/授权日：2017-08-22
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/41 | ..以其形状、相对尺寸或位置为特征的 |
| ------------H01L29/45 | ...欧姆电极 |