基本信息:
- 专利标题： SILICON CARBIDE SEMICONDUCTOR DEVICE
- 申请号：US15307303 申请日：2014-12-15
- 公开(公告)号：US20170221998A1 公开(公告)日：2017-08-03
- 发明人： Kohei EBIHARA , Akihiro KOYAMA , Hidenori KOKETSU , Akemi NAGAE , Kotaro KAWAHARA , Hiroshi WATANABE , Kensuke TAGUCHI , Shiro HINO
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Chiyoda-ku
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2014-093252 20140430
- 国际申请： PCT/JP2014/083094 WO 20141215
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/872 ; H01L29/36
摘要：
An object of the present invention is to provide a silicon carbide semiconductor device with which the electric field at the time of switching is relaxed and the element withstand voltage can be enhanced. The distance between the outer peripheral end of a second surface electrode and the inner peripheral end of a field insulation film is smaller than the distance between an outer peripheral end of the second surface electrode and an inner peripheral end of the field insulation film in the case where the electric field strength applied to the outer peripheral lower end of the second surface electrode is calculated so as to become equal to the smallest dielectric breakdown strength among the dielectric breakdown strength of the field insulation film and the dielectric breakdown strength of the surface protective film at the time of switching when the value of dV/dt is greater than or equal to 10 kV/μs.
公开/授权文献:
- US10020367B2 Silicon carbide semiconductor device 公开/授权日：2018-07-10