基本信息:
- 专利标题： METAL-INSULATOR-METAL CAPACITOR FABRICATION WITH UNITARY SPUTTERING PROCESS
- 申请号：US15192133 申请日：2016-06-24
- 公开(公告)号：US20170141182A1 公开(公告)日：2017-05-18
- 发明人： Praneet Adusumilli , Alexander Reznicek , Oscar Van Der Straten , Chih-Chao Yang
- 申请人： International Business Machines Corporation
- 主分类号： H01L49/02
- IPC分类号： H01L49/02 ; H01L21/02
摘要：
A metal-insulator-metal capacitor includes a bottom electrode comprising a nitride of a metal, an insulator disposed on the bottom electrode and comprising an oxide of the metal, and a top electrode disposed on the insulator and comprising a nitride of the metal. Optionally, the insulator further includes an oxynitride of the metal, at least a portion of the oxynitride being characterized by a progressive change in the ratio of oxygen to nitrogen over thickness.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L49/00 | 不包含在H01L27/00至H01L47/00和H01L51/00各组内的并且未包含在任何其他小类的固态器件；专门适用于制造或处理这些器件或其部件的方法或设备 |
| --------H01L49/02 | .薄膜或厚膜器件 |