基本信息:
- 专利标题： SEMICONDUCTOR SYSTEMS FOR FAST SENSING SPEED AND CORRECT AMPLIFICATION
- 申请号：US15405832 申请日：2017-01-13
- 公开(公告)号：US20170133079A1 公开(公告)日：2017-05-11
- 发明人： A Ram RIM , Ho Uk SONG
- 申请人： SK hynix Inc.
- 优先权： KR10-2015-0052728 20150414
- 主分类号： G11C11/4074
- IPC分类号： G11C11/4074 ; G11C11/4076 ; G11C11/406 ; G11C11/4096 ; G11C11/408 ; G11C11/4091 ; G11C11/4093
摘要：
A semiconductor device may include a power control signal generator and a sense amplifier circuit. The power control signal generator may generate a first power control signal, an enablement moment of the first power control signal controlled according to a logic level combination of temperature code signals in response to a mode signal. The sense amplifier circuit may generate a first power signal driven in response to the first power control signal and may generate a second power signal driven in response to a second power control signal. The sense amplifier circuit may sense and amplify a level of a bit line using the first power signal and the second power signal.
公开/授权文献:
IPC结构图谱:
| G11C11/56 | 组优先于G11C11/02至G11C11/54中各组。 |
| --G11C11/19 | .在谐振电路中应用非线性电抗器件的 |
| ----G11C11/26 | ..应用放电管的 |
| ------G11C11/40 | ...应用晶体管的 |
| --------G11C11/401 | ....形成需要刷新或电荷再生的单元的，即，动态单元的 |
| ----------G11C11/4063 | .....辅助电路，例如，用于寻址、译码、驱动、写、读出或定时的 |
| ------------G11C11/407 | ......用于场效应型存储单元的 |
| --------------G11C11/4074 | .......电源或电压发生电路，例如，偏置电压发生器、衬底片电压发生器、后备电源、电源控制电路 |