基本信息:
- 专利标题： SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- 申请号：US15365150 申请日：2016-11-30
- 公开(公告)号：US20170084735A1 公开(公告)日：2017-03-23
- 发明人： Yuichi TAKEUCHI , Naohiro SUZUKI , Masahiro SUGIMOTO , Hidefumi TAKAYA , Akitaka SOENO , Jun MORIMOTO , Narumasa SOEJIMA , Yukihiko WATANABE
- 申请人： Masahiro SUGIMOTO , Hidefumi TAKAYA , Akitaka SOENO , Jun MORIMOTO , DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA
- 优先权： JP2012-134031 20120613; JP2013-49229 20130312
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/16 ; H01L29/06 ; H01L21/04 ; H01L29/66 ; H01L29/417 ; H01L29/872 ; H01L29/15 ; H01L21/761
摘要：
An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |