
基本信息:
- 专利标题: ORGANIC THIN FILM PASSIVATION OF METAL INTERCONNECTIONS
- 专利标题(中):有机薄膜钝化金属互连
- 申请号:US15018686 申请日:2016-02-08
- 公开(公告)号:US20160155667A1 公开(公告)日:2016-06-02
- 发明人: Aleksandar ALEKSOV , Tony DAMBRAUSKAS , Danish FARUQUI , Mark S. HLAD , Edward R. PRACK
- 申请人: INTEL CORPORATION
- 主分类号: H01L21/78
- IPC分类号: H01L21/78 ; H01L21/02 ; H01L21/768 ; H01L23/00 ; H01L21/027
摘要:
Electronic assemblies and their manufacture are described. One embodiment relates to a method including depositing an organic thin film layer on metal bumps on a semiconductor wafer, the organic thin film layer also being formed on a surface adjacent to the metal bumps on the wafer. The wafer is diced into a plurality of semiconductor die structures, the die structures including the organic thin film layer. The semiconductor die structures are attached to substrates, wherein the attaching includes forming a solder bond between the metal bumps on a die structure and bonding pads on a substrate, and wherein the solder bond extends through the organic thin film layer. The organic thin film layer is then exposed to a plasma. Other embodiments are described and claimed.
摘要(中):
描述了电子组件及其制造。 一个实施例涉及一种方法,包括在半导体晶片上的金属凸块上沉积有机薄膜层,该有机薄膜层也形成在与晶片上的金属凸块相邻的表面上。 将晶片切割成多个半导体管芯结构,该管芯结构包括有机薄膜层。 半导体管芯结构附着到基板上,其中,附接包括在管芯结构上的金属凸块和衬底上的焊盘之间形成焊料接合,并且其中焊料接合延伸穿过有机薄膜层。 然后将有机薄膜层暴露于等离子体。 描述和要求保护其他实施例。
公开/授权文献:
- US09583390B2 Organic thin film passivation of metal interconnections 公开/授权日:2017-02-28
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置;专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |