发明申请
US20160079244A1 MONOLITHIC BI-DIRECTIONAL CURRENT CONDUCTING DEVICE AND METHOD OF MAKING THE SAME
有权
基本信息:
- 专利标题： MONOLITHIC BI-DIRECTIONAL CURRENT CONDUCTING DEVICE AND METHOD OF MAKING THE SAME
- 申请号：US14483851 申请日：2014-09-11
- 公开(公告)号：US20160079244A1 公开(公告)日：2016-03-17
- 发明人： JOHN V. VELIADIS
- 申请人： JOHN V. VELIADIS
- 申请人地址： US VA FALLS CHURCH
- 专利权人： NORTHROP GRUMMAN SYSTEMS CORPORATION
- 当前专利权人： NORTHROP GRUMMAN SYSTEMS CORPORATION
- 当前专利权人地址： US VA FALLS CHURCH
- 主分类号： H01L27/098
- IPC分类号： H01L27/098 ; H01L29/808 ; H01L29/06 ; H01L21/8232
摘要：
A monolithic bi-directional device provides bi-directional power flow and bi-directional blocking of high-voltages. The device includes a first transistor having a first drain formed over a first channel layer that overlays a substrate, and a second transistor that includes a second drain formed over a second channel layer that overlays the substrate. The substrate forms a common source for both the first transistor and the second transistor.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/085 | ....只包含场效应的组件 |
| ----------------H01L27/098 | .....有PN结栅极场效应晶体管的组件 |