发明申请
US20160079036A1 Systems and Methods for Suppressing Parasitic Plasma and Reducing Within-Wafer Non-Uniformity
有权
基本信息:
- 专利标题： Systems and Methods for Suppressing Parasitic Plasma and Reducing Within-Wafer Non-Uniformity
- 专利标题（中）：抑制寄生等离子体和减少晶片内非均匀性的系统和方法
- 申请号：US14668174 申请日：2015-03-25
- 公开(公告)号：US20160079036A1 公开(公告)日：2016-03-17
- 发明人： Hu Kang , Adrien LaVoie , Shankar Swaminathan , Jun Qian , Chloe Baldasseroni , Frank Pasquale , Andrew Duvall , Ted Minshall , Jennifer Petraglia , Karl Leeser , David Smith , Sesha Varadarajan , Edward Augustyniak , Douglas Keil
- 申请人： LAM RESEARCH CORPORATION
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; C23C16/34 ; C23C16/40 ; C23C16/505 ; C23C16/455
摘要：
A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.
摘要（中）：
用于在衬底上沉积膜的衬底处理系统包括限定反应体积的处理室。 喷头包括杆部，其一端连接在处理室的上表面上。 基部连接到杆部的相对端并且从杆部径向向外延伸。 淋浴头构造成将至少一种工艺气体和吹扫气体引入反应体积。 等离子体发生器被配置为在反应体积中选择性地产生RF等离子体。 边缘调整系统包括套环和寄生等离子体还原元件，该元件位于套环与喷头的上表面之间的茎部周围。 寄生等离子体还原元件被配置为减少喷头和处理室的上表面之间的寄生等离子体。