基本信息:
- 专利标题： SEMICONDUCTOR COMPONENT AND METHOD
- 专利标题（中）：半导体元件和方法
- 申请号：US14452162 申请日：2014-08-05
- 公开(公告)号：US20160043185A1 公开(公告)日：2016-02-11
- 发明人： Chun-Li Liu
- 申请人： Semiconductor Components Industries, LLC
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L21/74 ; H01L21/02
摘要：
In accordance with an embodiment, a method for manufacturing a semiconductor component includes providing a semiconductor material having a surface and forming a passivation layer on the semiconductor material Portions of the passivation layer are removed and portions of the semiconductor material exposed by removing the portions of the passivation layer are also removed. A layer of dielectric material is formed on the passivation layer and the exposed portions of the semiconductor material and first and second cavities are formed in the layer of dielectric material. The first cavity exposes a first portion of the semiconductor material and has at least one step shaped sidewall and the second cavity exposes a second portion of the semiconductor material. A first electrode is formed in the first cavity and a second electrode is formed in the second cavity.
摘要（中）：
根据实施例，制造半导体部件的方法包括提供具有表面并在半导体材料上形成钝化层的半导体材料，去除钝化层的部分，并且通过去除部分 钝化层也被去除。 在钝化层上形成介电材料层，半导体材料的暴露部分和第一和第二空腔形成在电介质材料层中。 第一腔暴露半导体材料的第一部分并且具有至少一个阶梯形侧壁，并且第二腔暴露半导体材料的第二部分。 第一电极形成在第一腔中，第二电极形成在第二腔中。
公开/授权文献:
- US09257513B1 Semiconductor component and method 公开/授权日：2016-02-09