基本信息:
- 专利标题： PECVD PROCESS
- 专利标题（中）：PECVD过程
- 申请号：US14869371 申请日：2015-09-29
- 公开(公告)号：US20160017497A1 公开(公告)日：2016-01-21
- 发明人： NAGARAJAN RAJAGOPALAN , Xinhai HAN , Michael TSIANG , Masaki OGATA , Zhijun JIANG , Juan Carlos ROCHA-ALVAREZ , Thomas NOWAK , Jianhua ZHOU , Ramprakash SANKARAKRISHNAN , Amit Kumar BANSAL , Jeongmin LEE , Todd EGAN , Edward BUDIARTO , Dmitriy PANASYUK , Terrance Y. LEE , Jian J. CHEN , Mohamad A. AYOUB , Heung Lak PARK , Patrick REILLY , Shahid SHAIKH , Bok Hoen KIM , Sergey STARIK , Ganesh BALASUBRAMANIAN
- 申请人： Applied Materials, Inc.
- 主分类号： C23C16/52
- IPC分类号： C23C16/52 ; C23C16/46 ; C23C16/509 ; C23C16/455
摘要：
A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
摘要（中）：
描述了根据PECVD工艺处理衬底的方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。
公开/授权文献:
- US09458537B2 PECVD process 公开/授权日：2016-10-04