发明申请
US20120251710A1 METHOD OF PRODUCING HIGH PURITY SiOx NANOPARTICLES WITH EXCELLENT VOLATILITY AND APPARATUS FOR PRODUCING THE SAME
审中-公开
基本信息:
- 专利标题： METHOD OF PRODUCING HIGH PURITY SiOx NANOPARTICLES WITH EXCELLENT VOLATILITY AND APPARATUS FOR PRODUCING THE SAME
- 专利标题（中）：生产具有优异挥发性的高纯度SiO x纳米粒子的方法及其制造方法
- 申请号：US13267474 申请日：2011-10-06
- 公开(公告)号：US20120251710A1 公开(公告)日：2012-10-04
- 发明人： Bo-Yun JANG , Jin-Seok LEE , Joon-Soo KIM
- 申请人： Bo-Yun JANG , Jin-Seok LEE , Joon-Soo KIM
- 申请人地址： KR Yuseong-gu
- 专利权人： KOREA INSTITUTE OF ENERGY RESEARCH
- 当前专利权人： KOREA INSTITUTE OF ENERGY RESEARCH
- 当前专利权人地址： KR Yuseong-gu
- 优先权： KR10-2011-0030414 20110401
- 主分类号： C01B33/113
- IPC分类号： C01B33/113 ; B05D5/12 ; B01J19/00 ; C23C16/26 ; B82Y40/00 ; B82Y30/00
摘要：
The present disclosure provides a method of producing high purity SiOx nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of SiOx nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting SiOx vapor produced by reaction between the molten silicon and the injected gas.
摘要（中）：
本公开内容提供了制造具有优异挥发性的高纯度SiO x纳米颗粒的方法及其制造方法，其能够通过感应加热熔融硅并将气体注入熔融硅的表面而大量生产SiO x纳米颗粒。 该装置包括：真空室，其中装有原料硅的石墨坩埚，石墨坩埚安装在真空室内;感应熔化部，其通过感应加热石墨坩埚中接收的硅材料形成熔融硅;气体 将注入气体的石油坩埚与熔融硅的表面直接接触的集尘器，以及设置在石墨坩埚上方的集电体，收集由熔融硅与注入气体反应产生的SiO x蒸气。
IPC结构图谱:
| C | 化学；冶金 |
| --C01 | 无机化学 |
| ----C01B | 非金属元素；其化合物 |
| ------C01B33/00 | 硅；其化合物 |
| --------C01B33/113 | .氧化硅；其水合物 |