发明申请
US20120125883A1 METHOD FOR MANUFACTURING A MAGNETIC WRITE POLE USING A MULTI-LAYERED HARD MASK STRUCTURE
有权
基本信息:
- 专利标题： METHOD FOR MANUFACTURING A MAGNETIC WRITE POLE USING A MULTI-LAYERED HARD MASK STRUCTURE
- 专利标题（中）：使用多层硬掩模结构制造磁性写入点的方法
- 申请号：US12953269 申请日：2010-11-23
- 公开(公告)号：US20120125883A1 公开(公告)日：2012-05-24
- 发明人： Guomin Mao , Yi Zheng
- 申请人： Guomin Mao , Yi Zheng
- 申请人地址： NL AZ Amsterdam
- 专利权人： Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人： Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址： NL AZ Amsterdam
- 主分类号： B44C1/22
- IPC分类号： B44C1/22
摘要：
A method for manufacturing a magnetic write pole using a mask that includes a multi-layer hard mask. The multi-layer hard mask hard mask includes a first hard mask layer that is constructed of a Si containing material that can be spun on and a second hard mask material that is deposited by a deposition process such as sputter deposition. The first hard mask layer has optical properties that allow it to function well as a bottom anti-reflective coating (BARC) and also has optical properties that match well with an underlying image transfer layer. The second hard mask material has good selectivity for reactive ion etching so that it functions well as a RIE hard mask.
摘要（中）：
一种使用包括多层硬掩模的掩模制造磁性写入极的方法。 多层硬掩模硬掩模包括由可以纺丝的含Si材料构成的第一硬掩模层和通过诸如溅射沉积的沉积工艺沉积的第二硬掩模材料。 第一个硬掩模层具有允许其作为底部抗反射涂层（BARC）的良好功能的光学性质，并且还具有与底层图像转印层良好匹配的光学性质。 第二种硬掩模材料对反应离子蚀刻具有良好的选择性，因此其作为RIE硬掩模的功能很好。