
基本信息:
- 专利标题: NITRIDE SEMICONDUCTOR STRUCTURE
- 专利标题(中):氮化物半导体结构
- 申请号:US13355108 申请日:2012-01-20
- 公开(公告)号:US20120119220A1 公开(公告)日:2012-05-17
- 发明人: Yih-Der Guo , Suh-Fang Lin , Wei-Hung Kuo , Po-Chun Liu , Tung-Wei Chi , Chu-Li Chao , Jenq-Dar Tsay
- 申请人: Yih-Der Guo , Suh-Fang Lin , Wei-Hung Kuo , Po-Chun Liu , Tung-Wei Chi , Chu-Li Chao , Jenq-Dar Tsay
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 优先权: TW95132153 20060831; TW98109393 20090323; TW98109394 20090323
- 主分类号: H01L29/20
- IPC分类号: H01L29/20
摘要:
A nitride semiconductor substrate includes an epitaxy substrate, a patterned nitride semiconductor pillar layer, a nitride semiconductor layer, and a mask layer is provided. The nitride semiconductor pillar layer includes a plurality of first patterned arranged hollow structures and a plurality of second patterned arranged hollow structures formed among the first patterned arranged hollow structures. The second patterned arranged hollow structures have nano dimensions. The nitride semiconductor pillar layer is formed on the epitaxy substrate, and the nitride semiconductor layer is formed on the nitride semiconductor pillar layer. The mask layer covers surfaces of the nitride semiconductor pillar layer and the epitaxy substrate.
摘要(中):
氮化物半导体衬底包括外延衬底,图案化氮化物半导体柱层,氮化物半导体层和掩模层。 氮化物半导体柱层包括多个第一图案化布置的中空结构和在第一图案化排列的中空结构之间形成的多个第二图案化布置的中空结构。 第二图案化排列的中空结构具有纳米尺寸。 在外延基板上形成氮化物半导体柱层,在氮化物半导体柱层上形成氮化物半导体层。 掩模层覆盖氮化物半导体柱层和外延基板的表面。