
基本信息:
- 专利标题: Memory Arrays And Methods Of Forming Memory Cells
- 专利标题(中):内存阵列和形成记忆体的方法
- 申请号:US12886283 申请日:2010-09-20
- 公开(公告)号:US20120068143A1 公开(公告)日:2012-03-22
- 发明人: John Smythe , Gurtej S. Sandhu
- 申请人: John Smythe , Gurtej S. Sandhu
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L21/16
摘要:
Some embodiments include methods of forming memory cells utilizing various arrangements of conductive lines, electrodes and programmable material; with the programmable material containing high k dielectric material directly against multivalent metal oxide. Some embodiments include arrays of memory cells, with the memory cells including programmable material containing high k dielectric material directly against multivalent metal oxide.
摘要(中):
一些实施例包括利用导电线,电极和可编程材料的各种布置形成存储单元的方法; 其中可编程材料含有高k电介质材料直接抵抗多价金属氧化物。 一些实施例包括存储器单元的阵列,其中存储单元包括直接对抗多价金属氧化物的包含高k电介质材料的可编程材料。
公开/授权文献:
- US08409915B2 Methods of forming memory cells 公开/授权日:2013-04-02