基本信息:
- 专利标题： METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）：制造半导体器件的方法
- 申请号：US13285278 申请日：2011-10-31
- 公开(公告)号：US20120045861A1 公开(公告)日：2012-02-23
- 发明人： Shingo EGUCHI , Yohei MONMA , Atsuhiro TANI , Misako HIROSUE , Kenichi HASHIMOTO , Yasuharu HOSAKA
- 申请人： Shingo EGUCHI , Yohei MONMA , Atsuhiro TANI , Misako HIROSUE , Kenichi HASHIMOTO , Yasuharu HOSAKA
- 申请人地址： JP Atsugi-shi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2006-266543 20060929
- 主分类号： H01L33/08
- IPC分类号： H01L33/08 ; H01L21/762
摘要：
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.
摘要（中）：
当从衬底剥离包括半导体元件的元件形成层时，目的是抑制由剥离产生的静电产生的放电。 在衬底上形成释放层和元件形成层。 可以将后面剥离的支撑基材固定在元件形成层的上表面。 元件形成层通过支撑基材转变，并且在元件形成层和剥离层之间的界面产生剥离。 在供给液体时进行剥离，使得通过剥离顺序出现的元素形成层和剥离层被诸如纯水的液体润湿。 在元件形成层和剥离层的表面上产生的电荷可以被液体扩散，并且可以消除通过剥离带电的放电。
公开/授权文献:
- US09054141B2 Method for manufacturing semiconductor device 公开/授权日：2015-06-09