基本信息:
- 专利标题： SYSTEM AND METHOD FOR CONTROLLING PLASMA DEPOSITION UNIFORMITY
- 专利标题（中）：用于控制等离子体沉积均匀性的系统和方法
- 申请号：US12840057 申请日：2010-07-20
- 公开(公告)号：US20120021136A1 公开(公告)日：2012-01-26
- 发明人： Joseph P. Dzengeleski , George M. Gammel , Timothy J. Miller
- 申请人： Joseph P. Dzengeleski , George M. Gammel , Timothy J. Miller
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： C23C16/505
- IPC分类号： C23C16/505 ; C23C16/00 ; C23C16/50
摘要：
A plasma process uniformity control apparatus comprises a plasma chamber defined by chamber walls and a plurality of magnetic elements disposed on the outside of the chamber walls. Each of the plurality of magnets is configured to supply a magnetic field directed at respective portions of the plasma inside the chamber to control the uniformity of the plasma directed toward the target substrate.
摘要（中）：
等离子体工艺均匀性控制装置包括由室壁限定的等离子体室和设置在室壁外侧的多个磁性元件。 多个磁体中的每一个被配置为提供指向室内的等离子体的各个部分的磁场，以控制朝向目标基板的等离子体的均匀性。