发明申请
US20110228587A1 NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD OF NONVOLATILE SEMICONDUCTOR MEMORY
有权
基本信息:
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD OF NONVOLATILE SEMICONDUCTOR MEMORY
- 专利标题（中）：非挥发性半导体存储器的非线性半导体存储器和制造方法
- 申请号：US13047067 申请日：2011-03-14
- 公开(公告)号：US20110228587A1 公开(公告)日：2011-09-22
- 发明人： Hiroshi ITO
- 申请人： Hiroshi ITO
- 优先权： JP2010-063300 20100318
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L21/02
摘要：
According to one embodiment, a nonvolatile semiconductor memory includes word lines, bit lines, memory cells, a dummy word line, a dummy bit line and dummy cells. The word lines and the bit lines cross. The memory cells are provided for each intersection of the word lines and bit lines. Each memory cell includes a first diode and a resistance change memory element. The dummy word line crosses the bit lines. The dummy bit line crosses the word lines. The dummy cells are provided at each intersection of the dummy word line and the bit lines, and at each intersection of the dummy bit line and the word lines. Each dummy cell includes a second diode.
摘要（中）：
根据一个实施例，非易失性半导体存储器包括字线，位线，存储单元，虚拟字线，虚拟位线和虚设单元。 字线和位线交叉。 为字线和位线的每个交点提供存储单元。 每个存储单元包括第一二极管和电阻变化存储元件。 虚拟字线穿过位线。 虚拟位线与字线交叉。 在虚拟字线和位线的每个交叉处以及虚拟位线和字线的每个交点处提供虚拟单元。 每个虚拟单元包括第二二极管。