基本信息:
- 专利标题： PLASMA DEPOSITION SOURCE AND METHOD FOR DEPOSITING THIN FILMS
- 专利标题（中）：等离子体沉积源和沉积薄膜的方法
- 申请号：US12476891 申请日：2009-06-02
- 公开(公告)号：US20100297361A1 公开(公告)日：2010-11-25
- 发明人： Neil MORRISON , Andre HERZOG , Stefan HEIN , Peter SKUK
- 申请人： Neil MORRISON , Andre HERZOG , Stefan HEIN , Peter SKUK
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 优先权： EP09161034.5 20090525
- 主分类号： C23C16/50
- IPC分类号： C23C16/50 ; H05H1/32
摘要：
A plasma deposition source for transferring a deposition gas into a plasma phase and for depositing, from the plasma phase, a thin film onto a substrate moving in a substrate transport direction in a vacuum chamber is described. The plasma deposition source includes a multi-region electrode device adapted to be positioned in the vacuum chamber and including at least one RF electrode arranged opposite to the moving substrate, and an RF power generator adapted for supplying RF power to the RF electrode. The RF electrode has at least one gas inlet arranged at one edge of the RF electrode and at least one gas outlet arranged at the opposed edge of the RF electrode. A normalized plasma volume is provided by a plasma volume defined between an electrode surface and an opposite substrate position, divided by an electrode length. The normalized plasma volume is tuned to a depletion length of the deposition gas.
摘要（中）：
一种等离子体沉积源，用于将沉积气体转移到等离子体相中，并且用于从等离子体相将薄膜沉积到在真空室中沿基板输送方向移动的基板上。 等离子体沉积源包括多区域电极装置，其适于定位在真空室中并且包括与移动衬底相对设置的至少一个RF电极，以及适于向RF电极提供RF功率的RF发生器。 RF电极具有布置在RF电极的一个边缘处的至少一个气体入口和布置在RF电极的相对边缘处的至少一个气体出口。 通过在电极表面和相对的衬底位置之间限定的等离子体体积除以电极长度来提供归一化的等离子体体积。 归一化的等离子体体积被调节到沉积气体的耗尽长度。