发明申请
US20100044855A1 INTEGRATED THERMAL STRUCTURES AND FABRICATION METHODS THEREOF FACILITATING IMPLEMENTING A CELL PHONE OR OTHER ELECTRONIC SYSTEM
有权
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基本信息:
- 专利标题: INTEGRATED THERMAL STRUCTURES AND FABRICATION METHODS THEREOF FACILITATING IMPLEMENTING A CELL PHONE OR OTHER ELECTRONIC SYSTEM
- 专利标题(中):集成热结构及其制造方法,实现电池电话或其他电子系统
- 申请号:US12611405 申请日:2009-11-03
- 公开(公告)号:US20100044855A1 公开(公告)日:2010-02-25
- 发明人: Charles W. EICHELBERGER , James E. KOHL
- 申请人: Charles W. EICHELBERGER , James E. KOHL
- 申请人地址: US MA Woburn
- 专利权人: EPIC TECHNOLOGIES, INC.
- 当前专利权人: EPIC TECHNOLOGIES, INC.
- 当前专利权人地址: US MA Woburn
- 主分类号: H01L23/36
- IPC分类号: H01L23/36 ; H01L21/58
摘要:
Circuit structures and methods of fabrication are provided for facilitating implementing a complete electronic system in a compact package. The circuit structure includes, in one embodiment, a chips-first multichip base layer with conductive structures extending therethrough. An interconnect layer is disposed over the front surface of the multichip layer and includes interconnect metallization electrically connected to contact pads of the chips and to conductive structures extending through the structural material. A redistribution layer, disposed over the back surface of the multichip layer, includes a redistribution metallization also electrically connected to conductive structures extending through the structural material. Input/output contacts are arrayed over the redistribution layer, including over the lower surfaces of at least some integrated circuit chips within the multichip layer, and are electrically connected through the redistribution metallization, conductive structures, and interconnect metallization to contact pads of the integrated circuit chips of the multichip layer.
摘要(中):
提供了电路结构和制造方法,以便于以紧凑的封装实现完整的电子系统。 在一个实施例中,电路结构包括具有延伸穿过其中的导电结构的芯片 - 第一多芯片基底层。 互连层设置在多芯层的前表面上,并且包括电连接到芯片的接触焊盘和延伸穿过结构材料的导电结构的互连金属化。 设置在多芯层的后表面上的再分配层包括还电连接到延伸穿过结构材料的导电结构的再分布金属化。 输入/输出触点排列在再分配层上,包括在多芯层内的至少一些集成电路芯片的下表面上,并且通过再分布金属化,导电结构和互连金属化电连接到集成电路的接触焊盘 多芯片层的芯片。
公开/授权文献:
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L23/00 | 半导体或其他固态器件的零部件 |
--------H01L23/34 | .冷却装置;加热装置;通风装置或温度补偿装置 |
----------H01L23/36 | ..为便于冷却或加热对材料或造型的选择,例如散热器 |