
基本信息:
- 专利标题: Semiconductor light-emitting device and method
- 专利标题(中):半导体发光器件及方法
- 申请号:US12216848 申请日:2008-07-11
- 公开(公告)号:US20090014744A1 公开(公告)日:2009-01-15
- 发明人: Min-Hsun Hsieh , Chien-Yuan Wang
- 申请人: Min-Hsun Hsieh , Chien-Yuan Wang
- 申请人地址: TW Hsinchu
- 专利权人: EPISTAR CORPORATION
- 当前专利权人: EPISTAR CORPORATION
- 当前专利权人地址: TW Hsinchu
- 优先权: TW096125838 20070712
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same.
摘要(中):
本发明公开了一种包括半导体发光元件,第一附着层和波长转换结构的半导体发光器件。 从半导体发光元件发射的初级光进入波长转换结构以产生其波长与初级光的波长不同的转换光。 此外,本发明还提供了其形成方法。
公开/授权文献:
- US07906792B2 Semiconductor light-emitting device and method 公开/授权日:2011-03-15