发明申请
US20080100964A1 MAGNETIC RECORDING SYSTEM WITH MEDIUM HAVING ANTIFERROMAGNETIC-TO- FERROMAGNETIC TRANSITION LAYER EXCHANGE-COUPLED TO RECORDING LAYER
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![MAGNETIC RECORDING SYSTEM WITH MEDIUM HAVING ANTIFERROMAGNETIC-TO- FERROMAGNETIC TRANSITION LAYER EXCHANGE-COUPLED TO RECORDING LAYER](/abs-image/US/2008/05/01/US20080100964A1/abs.jpg.150x150.jpg)
基本信息:
- 专利标题: MAGNETIC RECORDING SYSTEM WITH MEDIUM HAVING ANTIFERROMAGNETIC-TO- FERROMAGNETIC TRANSITION LAYER EXCHANGE-COUPLED TO RECORDING LAYER
- 专利标题(中):磁记录系统,具有与抗磁反应转移层交换耦合到记录层的介质
- 申请号:US11553215 申请日:2006-10-26
- 公开(公告)号:US20080100964A1 公开(公告)日:2008-05-01
- 发明人: Eric Edward Fullerton , Stefan Maat , Ian Robson McFadyen , Jan-Ulrich Thiele
- 申请人: Eric Edward Fullerton , Stefan Maat , Ian Robson McFadyen , Jan-Ulrich Thiele
- 申请人地址: US CA San Jose
- 专利权人: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
- 当前专利权人: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
- 当前专利权人地址: US CA San Jose
- 主分类号: G11B5/82
- IPC分类号: G11B5/82 ; G11B5/65
摘要:
A magnetic recording disk drive has a bilayer recording medium of a high-anisotropy recording layer and an exchange-coupled antiferromagnetic-to-ferromagnetic (AF-F) transition layer. The transition layer has an AF-F transition temperature (TAF-F) that decreases relatively rapidly with increasing applied magnetic field. Thus the transition layer has a transition field HAF-F(T), which is the applied magnetic field required to transition the material from antiferromagnetic to ferromagnetic at temperature T without the need to heat the layer. At ambient temperature and in the absence of HW, the transition layer is antiferromagnetic and the switching field H0 of the bilayer is just the H0 of the high-anisotropy recording layer, which is typically much higher than HW. In the presence of the write field HW the transition layer transitions from antiferromagnetic to ferromagnetic so that data can be written to the recording by the mere application of the write field HW without the need to heat the transition layer or recording layer. The transition layer may be formed of Fe(RhM), where M is an element selected from V, Mn, Au and Ni.
摘要(中):
磁记录盘驱动器具有高各向异性记录层和交换耦合的反铁磁到铁磁(AF-F)过渡层的双层记录介质。 过渡层具有随着施加的磁场增加而相对快速地减小的AF-F转变温度(T AF AF F F)。 因此,过渡层具有过渡场H AF-F(T),其是在温度T下将材料从反铁磁转变为铁磁所需的施加磁场,而不需要加热该层。 在环境温度下和在不存在的情况下,过渡层是反铁磁性的,并且双层的开关场H 0正好是H SUB 的高各向异性记录层,其通常远高于H。 在存在写入场的情况下,过渡层从反铁磁转变为铁磁性,从而可以通过仅仅应用写入场H W来将数据写入记录。 而不需要加热过渡层或记录层。 过渡层可以由Fe(RhM)形成,其中M是选自V,Mn,Au和Ni的元素。
IPC结构图谱:
G | 物理 |
--G11 | 信息存储 |
----G11B | 基于记录载体和换能器之间的相对运动而实现的信息存储 |
------G11B5/00 | 借助于记录载体的激磁或退磁进行记录的;用磁性方法进行重现的;为此所用的记录载体 |
--------G11B5/48 | .磁头相对于记录载体的配置或安装 |
----------G11B5/82 | ..盘状载体 |