基本信息:
- 专利标题： HALFTONE TYPE PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK THEREOF
- 专利标题（中）：HALFTONE类型相移屏蔽区和相位移屏蔽
- 申请号：US11562217 申请日：2006-11-21
- 公开(公告)号：US20070092808A1 公开(公告)日：2007-04-26
- 发明人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
- 申请人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
- 专利权人： HOYA CORPORATION
- 当前专利权人： HOYA CORPORATION
- 优先权： JPP.2002-047050 20020222; JPP.2002-124769 20020425; JPP.2002-325200 20021108
- 主分类号： G03C5/00
- IPC分类号： G03C5/00 ; G03F1/00
摘要：
A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要（中）：
一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成 提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度 层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。