基本信息:
- 专利标题： Memory and semiconductor device
- 专利标题（中）：存储器和半导体器件
- 申请号：US11265894 申请日：2005-11-03
- 公开(公告)号：US20060092737A1 公开(公告)日：2006-05-04
- 发明人： Hidenari Hachino , Hironobu Mori , Nobumichi Okazaki , Katsuhisa Aratani
- 申请人： Hidenari Hachino , Hironobu Mori , Nobumichi Okazaki , Katsuhisa Aratani
- 优先权： JPP2004-320503 20041104
- 主分类号： G11C7/02
- IPC分类号： G11C7/02
摘要：
A memory includes: memory elements arranged in a matrix, each memory element having such characteristics that when an electric signal at a level equal to or higher than that of a first threshold signal is applied to the memory element, the resistance thereof is changed from a high value to a low value, and when an electric signal at a level equal to or higher than that of a second threshold signal is applied thereto, the resistance is changed from the low value to the high value, the polarities of the first and second threshold signals being different from each other; electric circuits for applying electric signals to the memory elements; and detection units each for measuring a current flowing through the corresponding memory element or a voltage applied thereto from the start of the application of electric signals to detect whether the resistance is high or low.
摘要（中）：
存储器包括：排列成矩阵的存储器元件，每个存储元件具有这样的特性，即当等于或高于第一阈值信号的电信号被施加到存储元件时，其电阻从 高值为低值，当施加等于或高于第二阈值信号的电信号时，电阻从低值变为高值，第一和第二极性的极性 阈值信号彼此不同; 用于向存储元件施加电信号的电路; 以及各自的检测单元，用于测量从开始施加电信号开始流过相应的存储元件的电流或施加到其上的电压，以检测电阻是高还是低。
公开/授权文献:
- US07719873B2 Memory and semiconductor device with memory state detection 公开/授权日：2010-05-18
IPC结构图谱:
| G | 物理 |
| --G11 | 信息存储 |
| ----G11C | 静态存储器 |
| ------G11C7/00 | 数字存储器信息的写入或读出装置 |
| --------G11C7/02 | .有避免寄生信号的装置的 |