发明申请
US20060033178A1 Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus
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基本信息:
- 专利标题： Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus
- 专利标题（中）：蚀刻方法，形成沟槽隔离结构的方法，半导体衬底和半导体器件
- 申请号：US11201266 申请日：2005-08-10
- 公开(公告)号：US20060033178A1 公开(公告)日：2006-02-16
- 发明人： Hiroyuki Matsuo , Toshiki Nakajima , Kunihiro Miyazaki
- 申请人： Hiroyuki Matsuo , Toshiki Nakajima , Kunihiro Miyazaki
- 优先权： JP2004-236181 20040813
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/76
摘要：
An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from SiO2 as a main material. The etching method includes the steps of: preparing the base material; and supplying the etching agent onto the base material to form a step between the first and second regions using a feature that an etching rate of silicon by the etching agent is higher than an etching rate of SiO2 by the etching agent, so that the height of the surface of the first region is lower than the height of the surface of the second region.
摘要（中）：
公开了一种使用含有氟化氢和臭氧的蚀刻剂对基材进行蚀刻处理的蚀刻方法。 基材具有以硅为主要材料的第一区域和由SiO 2主要材料构成的第二区域。 蚀刻方法包括以下步骤：制备基材; 以及将所述蚀刻剂供应到所述基材上以形成所述第一和第二区域之间的台阶，其特征在于，所述蚀刻剂的硅的蚀刻速率高于所述蚀刻剂的SiO 2的蚀刻速率 蚀刻剂，使得第一区域的表面的高度低于第二区域的表面的高度。