基本信息:
- 专利标题： Mid-ir microchip laser: ZnS:Cr2+ laser with saturable absorber material
- 专利标题（中）：中红外微芯片激光器：具有可饱和吸收材料的ZnS：Cr2 +激光器
- 申请号：US10247272 申请日：2002-09-19
- 公开(公告)号：US20030072340A1 公开(公告)日：2003-04-17
- 发明人： Sergey B. Mirov , Vladimir V. Fedorov
- 主分类号： H01L021/00
- IPC分类号： H01L021/00 ; H01S003/14 ; H01S005/00
摘要：
A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2null thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. The gain material is susceptible to utilization of direct diode or fiber laser pumping of a microchip laser with a level of power density providing formation of positive lens and corresponding cavity stabilization as well as threshold population inversion in the laser material. Multiple applications of the laser material are contemplated in the invention.
摘要（中）：
激光增益材料的制造方法和这种介质的利用方法包括以下步骤：通过脉冲激光沉积或等离子溅射在晶体生长之后，在ZnS晶面上引入可控厚度的过渡金属，优选Cr 2+薄膜，热退火 用于在温度和曝光时间内有效地将掺杂剂热扩散到晶体体积中的晶体在体积中提供掺杂剂的最高浓度而不降低由于散射和浓缩猝灭引起的激光性能，以及通过以下方式形成微芯片激光器： 将反射镜直接沉积在薄的Cr：ZnS晶片的平坦和平行的抛光面上，或依赖于这些面的内部反射。 增益材料易于利用具有功率密度水平的微芯片激光器的直接二极管或光纤激光泵浦，其提供形成正透镜并且相应的腔稳定以及激光材料中的阈值群体反转。 在本发明中考虑了激光材料的多种应用。