基本信息:
- 专利标题： 半導體記憶裝置及其製造方法 SEMICONDUCTOR MEMORY DEVICE AND ITS PRODUCTION PROCESS
- 专利标题（英）：Semiconductor memory device and its production process
- 专利标题（中）：半导体记忆设备及其制造方法 SEMICONDUCTOR MEMORY DEVICE AND ITS PRODUCTION PROCESS
- 申请号：TW092134218 申请日：2003-12-04
- 公开(公告)号：TWI229419B 公开(公告)日：2005-03-11
- 发明人： 遠藤哲郎 ENDOH, TETSUO , 舛岡富士雄 MASUOKA, FUJIO , 谷上拓司 TANIGAMI, TAKUJI , 橫山敬 YOKOYAMA, TAKASHI , 堀井新司 HORII, SHINJI
- 申请人： 舛岡富士雄 MASUOKA, FUJIO , 夏普股份有限公司 SHARP KABUSHIKI KAISHA
- 申请人地址： 日本 日本
- 专利权人： 舛岡富士雄 MASUOKA, FUJIO,夏普股份有限公司 SHARP KABUSHIKI KAISHA
- 当前专利权人： 舛岡富士雄 MASUOKA, FUJIO,夏普股份有限公司 SHARP KABUSHIKI KAISHA
- 当前专利权人地址： 日本 日本
- 代理人： 陳長文
- 优先权： 日本 2002-354403 20021205
- 主分类号： H01L
- IPC分类号： H01L
The present invention provides a semiconductor memory device comprising: a first conductivity type semiconductor substrate; and a plurality of memory cells constituted of an island-like semiconductor layer which is formed on the semiconductor substrate, and a charge storage layer and a control gate which are formed entirely or partially around a sidewall of the island-like semiconductor layer, wherein the plurality of memory cells are disposed in series, the island-like semiconductor layer which constitutes the memory cells has cross-sectional areas varying in stages in a horizontal direction of the semiconductor substrate, and an insulating film capable of passing charges is provided at least in a part of a plane of the island-like semiconductor layer horizontal to the semiconductor substrate.