基本信息:
- 专利标题: 金氧半電晶體反向電流之節流
- 专利标题(英):Reverse current throttling of a MOS transistor
- 专利标题(中):金氧半晶体管反向电流之节流
- 申请号:TW088100999 申请日:1999-01-22
- 公开(公告)号:TW404043B 公开(公告)日:2000-09-01
- 发明人: 里查艾德華布契
- 申请人: 美士美積體產品公司
- 申请人地址: 美國
- 专利权人: 美士美積體產品公司
- 当前专利权人: 美士美積體產品公司
- 当前专利权人地址: 美國
- 代理人: 陳長文
- 优先权: 美國 09/012,516 19980123
- 主分类号: H01L
- IPC分类号: H01L
The invention is a means for ensuring full current flow in the "" forward "" direction in a MOS transistor, and substantially reducing (and/or eliminating) current flow in the ""reverse"" direction. The forward voltage drop and reverse current are controllable and are determined by ratios of device size. In one embodiment, the present invention is a circuit coupled to an output stage transistor having an output voltage thereon to ensure current flow in one direction and to throttle current flow in a reverse direction. The circuit includes a first circuit coupled to the output transistor to progressively turn off the same as the output voltage reaches a first threshold voltage and approaches a rail voltage. The circuit further includes a second circuit coupled to the output transistor to turn off the same as the output voltage reaches a second threshold voltage where the second threshold voltage is greater than the rail voltage.