基本信息:
- 专利标题： 儲存裝置及其NAND快閃記憶體控制器
- 专利标题（英）：Controller for NAND flash memory and storage device applying the same
- 专利标题（中）：存储设备及其NAND闪存控制器
- 申请号：TW107130743 申请日：2018-08-31
- 公开(公告)号：TW202011407A 公开(公告)日：2020-03-16
- 发明人： 黃識夫 , HUANG, SHIH-FU , 林書民 , LIN, SHU-MIN , 吳若華 , WU, JO-HUA , 陳政宇 , CHEN, CHENG-YU
- 申请人： 大陸商合肥沛睿微電子股份有限公司 , RAYMX MICROELECTRONICS CORP.
- 申请人地址： 安徽省合肥市
- 专利权人： 大陸商合肥沛睿微電子股份有限公司,RAYMX MICROELECTRONICS CORP.
- 当前专利权人： 大陸商合肥沛睿微電子股份有限公司,RAYMX MICROELECTRONICS CORP.
- 当前专利权人地址： 安徽省合肥市
- 代理人： 李文賢
- 主分类号： G11C16/02
- IPC分类号： G11C16/02 ; G11C16/26 ; G11C16/30 ; G11C16/32
A flash memory controller is adapted to a NAND flash memory and a voltage supply circuit. The voltage supply circuit supplies the memory with electrical current. The controller comprises a flash control circuit, a current sense circuit and a processor. The flash control circuit is adapted to control the memory's operations. The current sense circuit is adapted to measure current consumed during the operation of the memory and output a current value. The processor output a control signal in accordance with the consumed current. Consequently, the flash memory controller is able to instantly obtain the consumed current and decided if the memory works properly. In addition, a storage device having the flash memory controller is able to instantly obtain the consumed current and decided if the memory works properly, as well.
公开/授权文献:
- TWI689927B 儲存裝置及其NAND快閃記憶體控制器 公开/授权日：2020-04-01