基本信息:
- 专利标题： 用以降低閘極誘發障壁下降／短通道效應同時最小化對驅動電流的影響的有欠疊尖端的鍺電晶體結構
- 专利标题（英）：Germanium transistor structure with underlap tip to reduce gate induced barrier lowering/short channel effect while minimizing impact on drive current
- 专利标题（中）：用以降低闸极诱发障壁下降／短信道效应同时最小化对驱动电流的影响的有欠叠尖端的锗晶体管结构
- 申请号：TW106117690 申请日：2017-05-26
- 公开(公告)号：TW201813105A 公开(公告)日：2018-04-01
- 发明人： 瑞奇曼第 威利 , RACHMADY, WILLY , 雷 凡 , LE, VAN H. , 梅茲 馬修 , METZ, MATTHEW V. , 朱功 班傑明 , CHU-KUNG, BENJAMIN , 阿格拉瓦 艾希許 , AGRAWAL, ASHISH , 卡瓦萊羅斯 傑克 , KAVALIEROS, JACK T.
- 申请人： 英特爾股份有限公司 , INTEL CORPORATION
- 专利权人： 英特爾股份有限公司,INTEL CORPORATION
- 当前专利权人： 英特爾股份有限公司,INTEL CORPORATION
- 代理人： 林志剛
- 优先权： PCT/US16/40901 20160702
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L21/02
An apparatus including a transistor device including a channel disposed on a substrate between a source and a drain, a gate electrode disposed on the channel, wherein the channel includes a length dimension between source and drain that is greater than a length dimension of the gate electrode such that there is a passivated underlap between an edge of the gate electrode and an edge of the channel relative to each of the source and the drain. A method including forming a channel of a transistor device on a substrate; forming first and second passivation layers on a surface of substrate on opposite sides of the channel; forming a gate stack on the channel between first and second passivation layers; and forming a source on the substrate between the channel and the first passivation layer and a drain on the substrate between the channel and the second passivation layer.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |