The present invention discloses a removing method of barrier layer, wherein the barrier layer contains at least one layer of ruthenium or cobalt. The removing method of barrier layer includes using the heat flow etching method to remove the barrier layer containing ruthenium or cobalt layer formed on the non-recessed area of a semiconductor structure. The present invention further discloses a forming method of semiconductor structure, which includes: providing a semiconductor structure, which comprises a dielectric layer, a hard mask layer formed on the dielectric layer, a recessed area formed on the hard mask layer and the dielectric layer, a barrier layer formed on the hard mask layer and on the sidewall and the bottom of the recessed area and containing ruthenium or cobalt layer, and a metal layer formed on the barrier layer and filling up the recessed area; removing the metal layer on the non-recessed area and a portion of metal in the recessed area, and leaving a fixed amount of metal in the recessed area; and, using the heat flow etching method to remove the barrier layer containing ruthenium or cobalt layer and the hard mask layer on the non-recessed area.