基本信息:
- 专利标题： 資料寫入方法、記憶體控制電路單元與記憶體儲存裝置
- 专利标题（英）：Data writing method, memory control circuit unit and memory storage apparatus
- 专利标题（中）：数据写入方法、内存控制电路单元与内存存储设备
- 申请号：TW105100023 申请日：2016-01-04
- 公开(公告)号：TW201725588A 公开(公告)日：2017-07-16
- 发明人： 柯伯政 , KO, BO-CHENG
- 申请人： 群聯電子股份有限公司 , PHISON ELECTRONICS CORP.
- 专利权人： 群聯電子股份有限公司,PHISON ELECTRONICS CORP.
- 当前专利权人： 群聯電子股份有限公司,PHISON ELECTRONICS CORP.
- 代理人： 葉璟宗; 詹東穎; 劉亞君
- 主分类号： G11C16/02
- IPC分类号： G11C16/02 ; G11C16/14
A data writing method, a memory control circuit unit and a memory storage apparatus are provided. The method includes recording a flush command counter, and updating the flush command counter every when receiving a flush command from a host system. The method also includes getting a first physical erasing unit as an active physical unit and determining whether the flush command counter is larger than a flush command counter threshold. The method further includes: if the flush command counter is larger than a flush command counter threshold, setting the writing mode of the active physical unit as a first writing mode; and if the flush command counter is not larger than a flush command counter threshold, setting the writing mode of the active physical unit as a second writing mode.
公开/授权文献:
- TWI582776B 資料寫入方法、記憶體控制電路單元與記憶體儲存裝置 公开/授权日：2017-05-11