基本信息:
- 专利标题: 基板處理方法、及基板之切斷或接合裝置
- 专利标题(英):Cutting mechanism, joining mechanism, substrate processing system, substrate processing device, and substrate processing method
- 专利标题(中):基板处理方法、及基板之切断或接合设备
- 申请号:TW105139460 申请日:2013-05-16
- 公开(公告)号:TW201717268A 公开(公告)日:2017-05-16
- 发明人: 鬼頭義昭 , KITO, YOSHIAKI , 鈴木智也 , SUZUKI, TOMONARI , 堀正和 , HORI, MASAKAZU
- 申请人: 尼康股份有限公司 , NIKON CORPORATION
- 专利权人: 尼康股份有限公司,NIKON CORPORATION
- 当前专利权人: 尼康股份有限公司,NIKON CORPORATION
- 代理人: 閻啟泰; 林景郁
- 优先权: 61/650,712 20120523;61/654,500 20120601
- 主分类号: H01L21/301
- IPC分类号: H01L21/301 ; H01L21/677
A substrate processing system is provided with a first processing unit that continuously carries out first processing on substrates transported at a velocity (V1) and a second processing unit that transports the substrates processed by the first processing unit at a velocity (V2) and continuously carries out second processing on the substrates. When the speed relationship can be set at V1 > V2 by the performance of the first processing unit and the performance of the second processing unit, a cutting mechanism and selection input mechanism are further provided in addition to a plurality of second processing units being provided. When the speed relationship can be set at V1 < V2 by the performance of the first processing unit and the performance of the second processing unit, a joining mechanism that sequentially joins a plurality of substrates that have been processed by the first processing by the plurality of first processing units and inputs to the second processing unit is further provided in addition to a plurality of first processing units being provided.
公开/授权文献:
- TWI634595B 基板處理方法 公开/授权日:2018-09-01
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/301 | .....把半导体再细分成分离部分,例如分隔 |