基本信息:
- 专利标题： 經由物理氣相沉積製程沉積介電膜的方法
- 专利标题（英）：Methods for depositing dielectric films via physical vapor deposition processes
- 专利标题（中）：经由物理气相沉积制程沉积介电膜的方法
- 申请号：TW105118944 申请日：2016-06-16
- 公开(公告)号：TW201708611A 公开(公告)日：2017-03-01
- 发明人： 曾為民 , ZENG, WEIMIN , 尼古言善X , NGUYEN, THANH X. , 程亞娜 , CHENG, YANA , 曹勇 , CAO, YONG , 迪爾丹尼爾李 , DIEHL, DANIEL LEE , 古吉拉史瑞尼瓦思 , GUGGILLA, SRINIVAS , 汪榮軍 , WANG, RONGJUN , 唐先敏 , TANG, XIANMIN
- 申请人： 應用材料股份有限公司 , APPLIED MATERIALS, INC.
- 专利权人： 應用材料股份有限公司,APPLIED MATERIALS, INC.
- 当前专利权人： 應用材料股份有限公司,APPLIED MATERIALS, INC.
- 代理人： 李世章; 彭國洋
- 优先权： 14/744,688 20150619
- 主分类号： C23C28/00
- IPC分类号： C23C28/00 ; C23C14/34 ; C23C16/513
In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.