基本信息:
- 专利标题: 脫模膜、其製造方法及半導體封裝件之製造方法
- 专利标题(英):Mold release film, method for producing same and method for manufacturing semiconductor package
- 专利标题(中):脱模膜、其制造方法及半导体封装件之制造方法
- 申请号:TW104138269 申请日:2015-11-19
- 公开(公告)号:TW201630089A 公开(公告)日:2016-08-16
- 发明人: 笠井涉 , KASAI, WATARU , 鈴木政己 , SUZUKI, MASAMI
- 申请人: 旭硝子股份有限公司 , ASAHI GLASS COMPANY, LIMITED
- 专利权人: 旭硝子股份有限公司,ASAHI GLASS COMPANY, LIMITED
- 当前专利权人: 旭硝子股份有限公司,ASAHI GLASS COMPANY, LIMITED
- 代理人: 惲軼群
- 优先权: 2014-235735 20141120
- 主分类号: H01L21/56
- IPC分类号: H01L21/56 ; B29C33/68 ; B32B27/00 ; B32B27/30
Provided are: a mold release film which has excellent mold releasability and is capable of reducing the contamination of a mold during a sealing step; a method for producing this mold release film; and a method for manufacturing a semiconductor package, which uses this mold release film. This mold release film is arranged on a surface of a mold, said surface coming into contact with a curable resin, during the production of a semiconductor package, wherein a semiconductor element is arranged within the mold and sealed with a curable resin, thereby forming a resin sealed part. This mold release film comprises a resin-side mold release layer, which comes into contact with the curable resin during the formation of the resin sealed part, and a gas barrier layer. The gas barrier layer contains at least one polymer (I) selected from the group consisting of polymers having a vinyl alcohol unit and polymers having a vinylidene chloride unit, and the gas barrier layer has a thickness of 0.1-5 [mu]m.
公开/授权文献:
- TWI680516B 脫模膜、其製造方法及半導體封裝件之製造方法 公开/授权日:2019-12-21
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
--------------H01L21/56 | ....封装,例如密封层、涂层 |