基本信息:
- 专利标题： ＤＣ-ＤＣ轉換器用半導體裝置
- 专利标题（英）：A semiconductor device for DC/DC converter
- 专利标题（中）：ＤＣ-ＤＣ转换器用半导体设备
- 申请号：TW104142353 申请日：2005-05-16
- 公开(公告)号：TW201611236A 公开(公告)日：2016-03-16
- 发明人： 白石正樹 , 宇野友彰 , 松浦伸悌
- 申请人： 瑞薩電子股份有限公司 , RENESAS ELECTRONICS CORPORATION
- 专利权人： 瑞薩電子股份有限公司,RENESAS ELECTRONICS CORPORATION
- 当前专利权人： 瑞薩電子股份有限公司,RENESAS ELECTRONICS CORPORATION
- 代理人： 陳長文
- 优先权： 2004-223664 20040730
- 主分类号： H01L25/10
- IPC分类号： H01L25/10 ; H01L23/28 ; H01L29/78
In a non-insulated DC-DC converter having a circuit in which a power MOS-FET high-side switch and a power MOS-FET low-side switch are connected in series, the power MOS-FET low-side switch and a Schottky barrier diode (D1) to be connected in parallel with the power MOS-FET low-side switch are formed within one semiconductor chip (5b). The formation region SDR of the Schottky barrier diode (D1) is disposed in the center in the shorter direction of the semiconductor chip (5b), and on both sides thereof, the formation regions of the power MOS-FET low-side switch are disposed. From the gate finger (6b) in the vicinity of both long sides on the main surface of the semiconductor chip (5b) toward the formation region SDR of the Schottky barrier diode (D1), a plurality of gate fingers (6b) are disposed so as to interpose the formation region SDR between them.
公开/授权文献:
- TWI600135B ＤＣ-ＤＣ轉換器用半導體裝置 公开/授权日：2017-09-21
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L25/00 | 由多个单个半导体或其他固态器件组成的组装件 |
| --------H01L25/03 | .所有包含在H01L27/00至H01L51/00各组中同一小组内的相同类型的器件，例如整流二极管的组装件 |
| ----------H01L25/10 | ..具有单独容器的器件 |