基本信息:
- 专利标题： 基板熱處理裝置及基板熱處理裝置之設置方法
- 专利标题（英）：Substrate heat treatment apparatus, method of installing substrate heat treatment apparatus
- 专利标题（中）：基板热处理设备及基板热处理设备之设置方法
- 申请号：TW104102444 申请日：2015-01-26
- 公开(公告)号：TW201541538A 公开(公告)日：2015-11-01
- 发明人： 小山勝彥 , OYAMA, KATSUHIKO , 金子裕史 , KANEKO, HIROFUMI , 菊池浩 , KIKUCHI, HIROSHI , 馬場則夫 , BABA, NORIO
- 申请人： 東京威力科創股份有限公司 , TOKYO ELECTRON LIMITED
- 专利权人： 東京威力科創股份有限公司,TOKYO ELECTRON LIMITED
- 当前专利权人： 東京威力科創股份有限公司,TOKYO ELECTRON LIMITED
- 代理人： 周良謀; 周良吉
- 优先权： 2014-012116 20140127
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H01L21/677 ; H01L21/205
Disclosed is a substrate heat treatment apparatus. The apparatus includes: a conveyance storage unit which includes a first storage section and a second storage section each of which stores a plurality of conveyance containers, and a conveyance mechanism configured to convey the conveyance containers, each of the conveyance containers accommodating a plurality of wafers; and a heat treatment unit including a heat treatment furnace which accommodates a holder configured to hold the plurality of wafers in multiple stages, and performs the heat treatment on the wafers. A mounting stage of a transfer section is provided below the first storage section in the conveyance storage unit. On the mounting stage, the conveyance containers are mounted so that the wafers within the conveyance containers are transferred to the holder in the heat treatment unit.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |