基本信息:
- 专利标题: 半導體裝置、及使用彼之交流發電機以及電力變換裝置
- 专利标题(英):Semiconductor device, and alternator and power conversion device which use same
- 专利标题(中):半导体设备、及使用彼之交流发电机以及电力变换设备
- 申请号:TW103142184 申请日:2014-12-04
- 公开(公告)号:TW201531009A 公开(公告)日:2015-08-01
- 发明人: 石丸哲也 , ISHIMARU, TETSUYA , 森睦宏 , MORI, MUTSUHIRO , 坂野順一 , SAKANO, JUNICHI , 恩田航平 , ONDA, KOHHEI
- 申请人: 日立功率半導體股份有限公司 , HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
- 专利权人: 日立功率半導體股份有限公司,HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
- 当前专利权人: 日立功率半導體股份有限公司,HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
- 代理人: 林志剛
- 优先权: 2013-256619 20131212
- 主分类号: H02M7/21
- IPC分类号: H02M7/21 ; H02M7/217 ; H01L27/24
This semiconductor device (S1) is provided with a first external electrode (101) having an outer peripheral section (101s) which is circular when viewed from above, and which is attached to an alternator (Ot). The first external electrode (101) has, mounted thereon: a MOSFET chip (103); a control circuit (104) into which a current or a voltage between a first main terminal (103d) and a second main terminal (103s) of the MOSFET chip (103) is inputted, and which generates, on the basis of the current or the voltage, a control signal to be supplied to a gate (103g) of the MOSFET chip (103); and a capacitor (105) for providing a power supply to the control circuit (104). A second external electrode (107) is provided to the MOSFET chip (103), at side opposite to the first external electrode. The first external electrode (101) and the first main terminal (103d) of the MOSFET chip (103) are electrically connected. Furthermore, the second external electrode (107) and the second main terminal (103s) of the MOSFET chip (103) are electrically connected.
公开/授权文献:
- TWI530080B 半導體裝置、及使用彼之交流發電機以及電力變換裝置 公开/授权日:2016-04-11
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H02 | 发电、变电或配电 |
----H02M | 用于交流和交流之间、交流和直流之间、或直流和直流之间的转换以及用于与电源或类似的供电系统一起使用的设备;直流或交流输入功率至浪涌输出功率的转换;以及它们的控制或调节 |
------H02M7/00 | 交流功率输入变换为直流功率输出;直流功率输入变换为交流功率输出 |
--------H02M7/02 | .不可逆的交流功率输入变换为直流功率输出 |
----------H02M7/04 | ..用静态变换器的 |
------------H02M7/06 | ...应用无控制极的放电管或无控制极的半导体器件的 |
--------------H02M7/21 | ....利用需要连续应用控制信号的三极管或晶体管器件的 |