基本信息:
- 专利标题： 高產量多層堆疊沉積
- 专利标题（英）：High throughput multi-layer stack deposition
- 专利标题（中）：高产量多层堆栈沉积
- 申请号：TW103110526 申请日：2014-03-20
- 公开(公告)号：TW201447025A 公开(公告)日：2014-12-16
- 发明人： 韓新海 , HAN, XINHAI , 蔣志鈞 , JIANG, ZHIJUN , 拉札高帕藍納卡拉詹 , RAJAGOPALAN, NAGARAJAN , 金秉憲 , KIM, BOK HOEN , 山卡克里西南蘭普拉卡西 , SANKARAKRISHNAN, RAMPRAKASH , 巴拉蘇拔馬尼安葛尼斯 , BALASUBRAMANIAN, GANESH , 羅莎亞凡利斯君卡洛斯 , ROCHA-ALVAREZ, JUAN CARLOS , 史瑞凡生慕庫德 , SRINIVASAN, MUKUND
- 申请人： 應用材料股份有限公司 , APPLIED MATERIALS, INC.
- 专利权人： 應用材料股份有限公司,APPLIED MATERIALS, INC.
- 当前专利权人： 應用材料股份有限公司,APPLIED MATERIALS, INC.
- 代理人： 蔡坤財; 李世章
- 优先权： 61/804,017 20130321
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; C23C16/54
Methods and apparatus for high rate formation of multi-layer stacks on semiconductor substrate is provided. A chamber for forming such stacks at high rates includes a first precursor line and a second precursor line. The first precursor line is coupled to a first diverter, which is coupled to a gas inlet in a lid assembly of the chamber. The second precursor line is coupled to a second diverter, which is also coupled to the gas inlet. The first diverter is also coupled to a first divert line, and the second diverter is coupled to a second divert line. Each of the first and second divert lines is coupled to a divert exhaust system. A chamber exhaust system is coupled to the chamber. The diverters are typically located close to the lid assembly.