基本信息:
- 专利标题： 用於腔室清潔或預清潔製程之鈷移除
- 专利标题（英）：Cobalt removal for chamber clean or pre-clean process
- 专利标题（中）：用于腔室清洁或预清洁制程之钴移除
- 申请号：TW103113564 申请日：2014-04-14
- 公开(公告)号：TW201447011A 公开(公告)日：2014-12-16
- 发明人： 吳凱 , WU, KAI , 鄭波 , ZHENG, BO , 柳尙澔 , YU, SANG HO , 傑拉多斯艾夫傑尼諾斯V , GELATOS, AVGERINOS V. , 羅佩布山N , ZOPE, BHUSHAN N. , 安瑟斯傑佛瑞 , ANTHIS, JEFFREY , 史密格班哲明 , SCHMIEGE, BENJAMIN
- 申请人： 應用材料股份有限公司 , APPLIED MATERIALS, INC.
- 专利权人： 應用材料股份有限公司,APPLIED MATERIALS, INC.
- 当前专利权人： 應用材料股份有限公司,APPLIED MATERIALS, INC.
- 代理人： 蔡坤財; 李世章
- 优先权： 61/818,286 20130501
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; B08B7/00 ; H01L21/302 ; H01L21/461
Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.
公开/授权文献:
- TWI600786B 用於腔室清潔或預清潔製程之鈷移除 公开/授权日：2017-10-01