基本信息:
- 专利标题: 射頻功率放大器與電子系統
- 专利标题(英):Radio frequency power amplifier with no reference voltage for biasing and electronic system
- 专利标题(中):射频功率放大器与电子系统
- 申请号:TW102115861 申请日:2013-05-03
- 公开(公告)号:TW201444272A 公开(公告)日:2014-11-16
- 发明人: 丁兆明 , DING, JAW MING , 張欣晴 , CHANG, HSIN CHIN
- 申请人: 日月光半導體製造股份有限公司 , ADVANCED SEMICONDUCTOR ENGINEERING INC.
- 申请人地址: 高雄市
- 专利权人: 日月光半導體製造股份有限公司,ADVANCED SEMICONDUCTOR ENGINEERING INC.
- 当前专利权人: 日月光半導體製造股份有限公司,ADVANCED SEMICONDUCTOR ENGINEERING INC.
- 当前专利权人地址: 高雄市
- 代理人: 陳長文
- 主分类号: H03F3/189
- IPC分类号: H03F3/189 ; H03F3/20
A radio frequency (RF) power amplifier with no reference voltage for biasing is disclosed. The RF power amplifier includes a three-terminal current source circuit, a current mirror circuit and an output-stage circuit. The three-terminal current source circuit receives a first system voltage and accordingly outputs a first current and a second current, and a source voltage exists between a first output terminal of the first current and a second output terminal of the second current. The current mirror circuit receives the first current and the second current and accordingly generates a bias current. The output-stage circuit receives the bias current so as to work at an operation bias point. The RF power amplifier utilizes the source voltage of the three-terminal current source circuit so the first system voltage is between a fist voltage and a second voltage, and then the output-stage circuit outputs an output current which does not vary with a deviation of the first system voltage also with temperature compensation.
公开/授权文献:
- TWI516021B 射頻功率放大器與電子系統 公开/授权日:2016-01-01
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H03 | 基本电子电路 |
----H03F | 放大器 |
------H03F3/00 | 只带有电子管或只带有半导体器件作为放大元件的放大器 |
--------H03F3/189 | .高频放大器,例如射频放大器 |