基本信息:
- 专利标题： 摻雜鈧之二氧化鉿層及其應用
- 专利标题（英）：Sc-doped HfO2 layer and application thereof
- 专利标题（中）：掺杂钪之二氧化铪层及其应用
- 申请号：TW101148620 申请日：2012-12-20
- 公开(公告)号：TW201425632A 公开(公告)日：2014-07-01
- 发明人： 蔡毅龍 , TSAI, YI LUNG , 薄慧雲 , BOR, HUI YUN , 魏肇男 , WEI, CHAO NAN , 伍員鵬 , WU, YUAN PANG , 王錫福 , WANG, SEA FUE , 陳弘軒 , CHEN, HONG SYUAN
- 申请人： 國防部軍備局中山科學研究院 , CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- 申请人地址： 桃園縣
- 专利权人： 國防部軍備局中山科學研究院,CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人： 國防部軍備局中山科學研究院,CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人地址： 桃園縣
- 代理人： 桂齊恆; 林景郁
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C23C14/14 ; C23C14/34 ; H01L29/772 ; H01L29/92
The present invention provides a Sc-doped HfO2 layer containing hafnium dioxide (HfO2) and scandium (Sc). Based on the total atom percentage (at%) of the Sc-doped HfO2 layer, the amount of the doped scandium is between 3 at% and 13 at%. The present invention further provides a metal-oxide-metal capacitor containing the Sc-doped HfO2 layer. The present invention further provides a metal-oxide-semiconductor field-effect transistor containing the Sc-doped HfO2 layer, and provides a resistive memory including the metal-oxide-metal capacitor. The present invention also provides a non-volatile memory including the metal-oxide-semiconductor field-effect transistor. Owing to the amount of the doped Sc in the Sc-doped HfO2 layer being between 3 at% and 13 at%, the leakage current of the Sc-doped HfO2 layer is significantly reduced.