基本信息:
- 专利标题： 強介電體薄膜形成用組成物及該薄膜之形成方法、以及以該方法所形成之薄膜
- 专利标题（英）：Composition for forming ferroelectric film and a method of forming the film, and the film formed under the method
- 专利标题（中）：强介电体薄膜形成用组成物及该薄膜之形成方法、以及以该方法所形成之薄膜
- 申请号：TW102129469 申请日：2013-08-16
- 公开(公告)号：TW201425264A 公开(公告)日：2014-07-01
- 发明人： 藤井順 , FUJII, JUN , 桜井英章 , SAKURAI, HIDEAKI , 曽山信幸 , SOYAMA, NOBUYUKI
- 申请人： 三菱綜合材料股份有限公司 , MITSUBISHI MATERIALS CORPORATION
- 专利权人： 三菱綜合材料股份有限公司,MITSUBISHI MATERIALS CORPORATION
- 当前专利权人： 三菱綜合材料股份有限公司,MITSUBISHI MATERIALS CORPORATION
- 代理人： 林志剛
- 优先权： 2012-199472 20120911
- 主分类号： C04B35/472
- IPC分类号： C04B35/472 ; H01B3/12 ; H01L21/02
Cracking does not occur in a ferroelectric thin film even when Ce is not doped in a composition for forming ferroelectric thin films and a composition for forming relatively thick ferroelectric thin films contains lead acetate instead of lead nitrate. A ferroelectric thin film made of a titanate lead-based perovskite film or a titanate zirconate lead-based complex perovskite film is formed using the composition for forming ferroelectric thin films. The composition includes lead acetate, a stabilizing agent made of lactic acid and polyvinyl pyrrolidone. In addition, a monomer-equivalent molar ratio of polyvinyl pyrrolidone to a perovskite A site atom included in the composition is more than 0 to less than 0.015. Furthermore, a weight average molecular weight of the polyvinyl pyrrolidone is 5000 to 100000.
公开/授权文献:
- TWI598319B 強介電體薄膜形成用組成物及該薄膜之形成方法、以及以該方法所形成之薄膜 公开/授权日：2017-09-11