基本信息:
- 专利标题： 包含鋁合金之Ｎ－金屬薄膜之沉積
- 专利标题（英）：Deposition of N-metal films comprising aluminum alloys
- 专利标题（中）：包含铝合金之Ｎ－金属薄膜之沉积
- 申请号：TW102123496 申请日：2013-07-01
- 公开(公告)号：TW201404916A 公开(公告)日：2014-02-01
- 发明人： 干德可塔史林尼維斯 , GANDIKOTA, SRINIVAS , 呂新亮 , LU, XINLIANG , 陳世忠 , CHEN, SHIH CHUNG , 唐薇 , TANG, WEI , 周靜 , ZHOU, JING , 甘古利沙謝德利 , GANGULI, SESHADRI , 湯普森大衛 , THOMPSON, DAVID , 安瑟斯傑佛瑞W , ANTHIS, JEFFREY W. , 諾里阿提夫 , NOORI, ATIF , 甘戈法如克 , GUNGOR, FARUK , 吳典曄 , WU, DIEN YEH , 張鎂 , CHANG, MEI , 傅新宇 , FU, XINYU , 雷雨 , LEI, YU
- 申请人： 應用材料股份有限公司 , APPLIED MATERIALS, INC.
- 专利权人： 應用材料股份有限公司,APPLIED MATERIALS, INC.
- 当前专利权人： 應用材料股份有限公司,APPLIED MATERIALS, INC.
- 代理人： 蔡坤財; 李世章
- 优先权： 61/668,807 20120706;61/781,868 20130314
- 主分类号： C23C16/20
- IPC分类号： C23C16/20 ; C23C16/08
Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.
公开/授权文献:
- TWI589720B 包含鋁合金之Ｎ－金屬薄膜之沉積 公开/授权日：2017-07-01