基本信息:
- 专利标题： 磁性隨機存取記憶體以及操作磁性隨機存取記憶體之方法
- 专利标题（英）：Magnetic random access memory and method of operating magnetic random access memory
- 专利标题（中）：磁性随机存取内存以及操作磁性随机存取内存之方法
- 申请号：TW102118327 申请日：2013-05-24
- 公开(公告)号：TW201403597A 公开(公告)日：2014-01-16
- 发明人： 金燦景 , KIM, CHAN-KYUNG , 車秀鎬 , CHA, SOO-HO , 姜東錫 , KANG, DONG-SEOK , 朴哲佑 , PARK, CHUL-WOO , 孫東賢 , SOHN, DONG-HYUN , 李潤相 , LEE, YUN-SANG , 金惠珍 , KIM, HYE-JIN
- 申请人： 三星電子股份有限公司 , SAMSUNG ELECTRONICS CO., LTD.
- 专利权人： 三星電子股份有限公司,SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： 三星電子股份有限公司,SAMSUNG ELECTRONICS CO., LTD.
- 代理人： 詹銘文
- 优先权： 10-2012-0075744 20120711
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; G11C13/00 ; G11C16/02
A magnetic memory device such as a magnetic random access memory (MRAM), and a memory module and a memory system on which the magnetic memory device is mounted are disclosed. The MRAM includes magnetic memory cells each of which varies between at least two states according to a magnetization direction and an interface unit that provides various interface functions. The memory module includes a module board and at least one MRAM chip mounted on the module board, and further includes a buffer chip that manages an operation of the at least one MRAM chip. The memory system includes the MRAM and a memory controller that communicates with the MRAM, and may communicate an electric-to-optical conversion signal or an optical-to-electric conversion signal by using an optical link that is connected between the MRAM and the memory controller.
信息查询:
EspacenetIPC结构图谱:
| G11C11/56 | 组优先于G11C11/02至G11C11/54中各组。 |
| --G11C11/02 | .应用磁性元件的 |
| ----G11C11/16 | ..应用磁自旋效应的存储元件的 |