基本信息:
- 专利标题： 共形的氮碳化矽及氮化矽薄膜之低溫電漿輔助化學氣相沉積
- 专利标题（英）：Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films
- 专利标题（中）：共形的氮碳化硅及氮化硅薄膜之低温等离子辅助化学气相沉积
- 申请号：TW101148105 申请日：2012-12-18
- 公开(公告)号：TW201333247A 公开(公告)日：2013-08-16
- 发明人： 蓋葉維多 , NGUYEN, VICTOR , 巴賽諾米海拉 , BALSEANU, MIHAELA , 夏立群 , XIA, LI-QUN , 惠蒂德瑞克R , WITTY, DEREK R.
- 申请人： 應用材料股份有限公司 , APPLIED MATERIALS, INC.
- 专利权人： 應用材料股份有限公司,APPLIED MATERIALS, INC.
- 当前专利权人： 應用材料股份有限公司,APPLIED MATERIALS, INC.
- 代理人： 蔡坤財; 李世章
- 优先权： 13/353,063 20120118
- 主分类号： C23C16/34
- IPC分类号： C23C16/34
Methods and apparatus for forming conformal silicon nitride films at low temperatures on a substrate are provided. The methods of forming a silicon nitride layer include performing a deposition cycle including flowing a processing gas mixture into a processing chamber having a substrate therein, wherein the processing gas mixture comprises precursor gas molecules having labile silicon to nitrogen, silicon to carbon, or nitrogen to carbon bonds, activating the precursor gas at a temperature between about 20 DEG C to about 480 DEG C by preferentially breaking labile bonds to provide one or more reaction sites along a precursor gas molecule, forming a precursor material layer on the substrate, wherein the activated precursor gas molecules bond with a surface on the substrate at the one or more reaction sites, and performing a plasma treatment process on the precursor material layer to form a conformal silicon nitride layer.
公开/授权文献:
- TWI541376B 共形的氮碳化矽及氮化矽薄膜之低溫電漿輔助化學氣相沉積 公开/授权日：2016-07-11