基本信息:
- 专利标题： 圖案化石墨烯製備方法
- 专利标题（英）：Patterned graphene preparation method
- 专利标题（中）：图案化石墨烯制备方法
- 申请号：TW101101662 申请日：2012-01-17
- 公开(公告)号：TW201331127A 公开(公告)日：2013-08-01
- 发明人： 宋健民 , SUNG, CHIEN MIN , 林逸樵 , LIN, I CHIAO , 林弘正 , LIN, HUNG CHENG
- 申请人： 錸鑽科技股份有限公司 , RITEDIA CORPORATION
- 申请人地址： 新竹縣
- 专利权人： 錸鑽科技股份有限公司,RITEDIA CORPORATION
- 当前专利权人： 錸鑽科技股份有限公司,RITEDIA CORPORATION
- 当前专利权人地址： 新竹縣
- 代理人： 黃志揚
- 主分类号： C01B31/04
- IPC分类号： C01B31/04 ; B32B33/00 ; B32B38/10
A patterned graphene preparation method uses a photolithographic etching process to obtain a patterned graphene, comprising: providing a substrate; forming a catalyst layer on the substrate; forming a carbon layer on the catalyst layer; and heating the carbon layer to a synthesis temperature to convert the carbon layer into graphene. A photolithographic etching process can be performed on the catalyst layer before the formation of the carbon layer. Alternatively, a photolithographic etching process is performed on the carbon layer before heating. Alternatively, a photolithographic etching process is performed on the graphene after heating. Compared with the laser etching process commonly used, the photolithographic etching process is suitable to fabricate large-area patterned graphene structures and has the advantages of high productivity and low costs.