基本信息:
- 专利标题： 半導體晶圓之製造方法及半導體晶圓
- 专利标题（英）：Semiconductor wafer manufacturing method, and semiconductor wafer
- 专利标题（中）：半导体晶圆之制造方法及半导体晶圆
- 申请号：TW101130853 申请日：2012-08-24
- 公开(公告)号：TW201314839A 公开(公告)日：2013-04-01
- 发明人： 金子忠昭 , KANEKO, TADAAKI , 大谷昇 , OHTANI, NOBORU , 牛尾昌史 , USHIO, SHOJI , 安達步 , ADACHI, AYUMU , 野上暁 , NOGAMI, SATORU
- 申请人： 東洋炭素股份有限公司 , TOYO TANSO CO., LTD.
- 专利权人： 東洋炭素股份有限公司,TOYO TANSO CO., LTD.
- 当前专利权人： 東洋炭素股份有限公司,TOYO TANSO CO., LTD.
- 代理人： 林志剛
- 优先权： 2011-185181 20110826
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/324
This semiconductor wafer manufacturing method includes a carbon layer forming step, a through hole forming step, a feed layer forming step, and an epitaxial layer forming step. In the carbon layer forming step, a carbon layer (71) is formed on the surface of a substrate (70) composed of a polycrystalline SiC. In the through hole forming step, a through hole (71c) is formed in the carbon layer (71) formed on the substrate (70). In the feed layer forming step, a Si layer (72) and a 3C-SiC polycrystalline layer (73) are formed on the surface of the carbon layer (71). In the epitaxial layer forming step, by heating the substrate (70), a seed crystal composed of a 4H-SiC single crystal is formed on the surface of the substrate (70) exposed through the through hole (71c), and a 4H-SiC single crystal layer is formed by growing the seed crystal by proximity liquid phase epitaxial growing.
公开/授权文献:
- TWI567867B 半導體晶圓之製造方法及半導體晶圓 公开/授权日：2017-01-21
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/768 | ...利用互连在器件中的分离元件间传输电流 |