基本信息:
- 专利标题： 半導體裝置
- 专利标题（英）：Semiconductor device
- 专利标题（中）：半导体设备
- 申请号：TW101107766 申请日：2012-03-07
- 公开(公告)号：TW201312671A 公开(公告)日：2013-03-16
- 发明人： 井本孝志 , IMOTO, TAKASHI , 安藤善康 , ANDO, YORIYASU , 谷本亮 , TANIMOTO, AKIRA , 岩本正次 , IWAMOTO, MASAJI , 竹本康男 , TAKEMOTO, YASUO , 田口英男 , TAGUCHI, HIDEO , 武部直人 , TAKEBE, NAOTO , 宮下浩一 , MIYASHITA, KOICHI , 田中潤 , TANAKA, JUN , 石田勝廣 , ISHIDA, KATSUHIRO , 渡邊昭吾 , WATANABE, SHOGO , 佐野雄一 , SANO, YUICHI
- 申请人： 東芝股份有限公司 , KABUSHIKI KAISHA TOSHIBA
- 专利权人： 東芝股份有限公司,KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： 東芝股份有限公司,KABUSHIKI KAISHA TOSHIBA
- 代理人： 陳長文
- 优先权： 2011-198888 20110912
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H05K13/08
In one embodiment, a semiconductor device has a substrate, a first semiconductor chip, an electrode, a first and second connection member, and a first and second sealing member. The electrode is disposed on the first semiconductor chip and contains Al. The first connection member electrically connects the electrode and the substrate and contains Au or Cu. The first sealing member seals the first semiconductor chip and the first connection member. One or more second semiconductor chips are stacked on the first sealing member. The second sealing member seals the first connection member, the one or more second semiconductor chips, and the one or more second connection members. A ratio of a total weight W1 of Cl ions and Br ions in the first sealing member to a weight W0 of resins of the substrate and the first sealing member is 7.5 ppm or lower.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
| --------------H01L21/60 | ....引线或其他导电构件的连接，用于工作时向或由器件传导电流 |