The present invention relates to a semiconductor crystal production method for producing a semiconductor crystal in which the occurrence of defects is suppressed. The production method comprises the following steps: forming a boron oxide film (31) on the inner wall of a growing container (10) that has a bottom section and a body section connected to the bottom section; bringing a silicon oxide-containing boron oxide melt (33) into contact with the boron oxide film (31) to form a silicon oxide-containing boron oxide film (32) on the inner wall of the growing container (10); forming a starting material melt (34) on a seed crystal (20) disposed on the bottom section within the growing container (10); and growing a semiconductor single crystal by solidifying the starting material melt (34) from the seed crystal (20) side.